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| Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n CMOS Schmitt-triggered inputs with pull-down n Matched propagation delay for both channels n Internally set deadtime n High side output in phase with input Product Summary VOFFSET IO+/VOUT ton/off (typ.) Deadtime (typ.) 600V max. 200 mA / 420 mA 10 - 20V 850 & 150 ns 700 ns Description The IR2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Packages Typical Connection up to 600V VCC VCC IN VB HO VS TO LOAD IN COM LO To Order CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-39 Previous Datasheet Index Next Data Sheet IR2111 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 7 through 10. Symbol VB VS VHO VCC VLO VIN dV s/dt PD RJA TJ TS TL Parameter Definition High Side Floating SupplyVoltage High Side Floating Supply Offset Voltage High Side Floating OutputVoltage Low Side and Logic Fixed Supply Voltage Low Side Output Voltage Logic InputVoltage Allowable Offset SupplyVoltage Transient (Figure 2) Package Power Dissipation @ TA +25C Thermal Resistance, Junction to Ambient JunctionTemperature Storage Temperature LeadTemperature (Soldering, 10 seconds) (8 Lead DIP) (8 Lead SOIC) (8 Lead DIP) (8 Lead SOIC) Value Min. -0.3 VB - 25 VS - 0.3 -0.3 -0.3 -0.3 -- -- -- -- -- -- -55 -- Max. 625 VB + 0.3 VB + 0.3 25 VCC + 0.3 VCC + 0.3 50 1.0 0.625 125 200 150 150 300 Units V V/ns W C/W C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential. Symbol VB VS VHO VCC VLO VIN TA Parameter Definition High Side Floating Supply AbsoluteVoltage High Side Floating Supply Offset Voltage High Side Floating OutputVoltage Low Side and Logic Fixed Supply Voltage Low Side Output Voltage Logic InputVoltage AmbientTemperature Value Min. VS + 10 Note 1 VS 10 0 0 -40 Max. VS + 20 600 VB 20 VCC VCC 125 Units V C Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. B-40 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL To Order Previous Datasheet Index Next Data Sheet IR2111 Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3. Symbol t on t off tr tf DT MT Parameter Definition Turn-On Propagation Delay Turn-Off Propagation Delay Turn-On Rise Time Turn-Off Fall Time Deadtime, LS Turn-Off to HS Turn-On & HS Turn-Off to LS Turn-On Delay Matching, HS & LS Turn-On/Off Value Min. Typ. Max. Units Test Conditions -- -- -- -- -- -- 850 150 80 40 700 30 1,000 180 130 65 900 -- ns VS = 0V VS = 600V Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol VIH Parameter Definition Logic "1" Input Voltage for HO & Logic "0" for LO Value Min. Typ. Max. Units Test Conditions 6.4 9.5 12.6 -- -- -- -- -- -- -- -- -- 50 70 20 -- 8.4 8.1 8.6 8.2 250 500 -- -- -- 3.8 6.0 8.3 100 100 50 100 180 40 1.0 9.5 9.2 9.6 9.2 -- -- mA VO = 0V, VIN = VCC PW 10 s VO = 15V, VIN = 0V PW 10 s V A mV V VCC = 10V VCC = 15V VCC = 20V VCC = 10V VCC = 15V VCC = 20V IO = 0A IO = 0A VB = VS = 600V VIN = 0V or VCC VIN = 0V or VCC VIN = VCC VIN = 0V VIL Logic "0" Input Voltage for HO & Logic "1" for LO -- -- -- VOH VOL I LK I QBS IQCC IIN+ IINVBSUV+ VBSUVVCCUV+ VCCUVIO+ I O- High Level Output Voltage, VBIAS - VO Low Level Output Voltage, VO Offset Supply Leakage Current Quiescent VBS Supply Current Quiescent VCC Supply Current Logic "1" Input Bias Current Logic "0" Input Bias Current VBS Supply Undervoltage Positive Going Threshold VBS Supply Undervoltage Negative Going Threshold VCC Supply Undervoltage Positive Going Threshold VCC Supply Undervoltage Negative Going Threshold Output High Short Circuit Pulsed Current Output Low Short Circuit Pulsed Current -- -- -- -- -- -- -- 7.3 7.0 7.6 7.2 200 420 To Order CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-41 Previous Datasheet Index Next Data Sheet IR2111 Functional Block Diagram VB UV DETECT DEAD TIME PULSE GEN IN UV DETECT HV LEVEL SHIFT R R S Q HO PULSE FILTER VS VCC LO DEAD TIME COM Lead Definitions Lead Symbol Description IN VB HO VS VCC LO COM Logic input for high side and low side gate driver outputs (HO & LO), in phase with HO High side floating supply High side gate drive output High side floating supply return Low side and logic fixed supply Low side gate drive output Low side return Lead Assignments 8 Lead DIP SO-8 IR2111 Part Number B-42 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL IR2111S To Order Previous Datasheet Index Next Data Sheet IR2111 Device Information Process & Design Rule Transistor Count Die Size Die Outline HVDCMOS 4.0 m 164 70 X 96 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method of Saw Method of Die Bond Wire Bond Leadframe Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness Package Remarks: Method Material Material Die Area Lead Plating Types Materials 800A Poly Silicon 4 m 6 m 5000A Al - Si (Si: 1.0% 0.1%) 6 m 9 m 20,000A 8 m X 8 m PSG (SiO2) 1.5 m PSG (SiO2) 1.5 m Full Cut Ablebond 84 - 1 Thermo Sonic Au (1.0 mil / 1.3 mil) Cu Ag Pb : Sn (37 : 63) 8 Lead PDIP / SO-8 EME6300 / MP150 / MP190 To Order CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-43 Previous Datasheet Index Next Data Sheet IR2111 IN HO LO Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit IN(LO) 50% 50% IN(HO) t on tr 90% t off 90% tf LO HO Figure 3. Switching Time Test Circuit 10% 10% Figure 4. Switching Time Waveform Definition IN (LO) 50% 50% 50% 50% IN IN (HO) LO HO 10% 10% DT MT 90% 10% MT 90% HO LO 90% LO HO Figure 5. Deadtime Waveform Definitions Figure 6. Delay Matching Waveform Definitions B-44 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL To Order Previous Datasheet Index Next Data Sheet IR2111 150 320V 140V 150 320V 140V 125 Junction Temperature (C) Junction Temperature (C) 125 100 100 10V 75 10V 75 50 50 25 25 0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6 0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6 Figure 7. IR2111 TJ vs. Frequency (IRFBC20) RGATE = 33, VCC = 15V Figure 8. IR2111 TJ vs. Frequency (IRFBC30) RGATE = 22 , VCC = 15V 150 320V 140V 10V 150 320V 140V 10V 125 Junction Temperature (C) Junction Temperature (C) 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6 125 100 100 75 75 50 50 25 25 0 1E+2 0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6 Figure 9. IR2111 TJ vs. Frequency (IRFBC40) RGATE = 15, VCC = 15V Figure 10. IR2111 TJ vs. Frequency (IRFPE50) RGATE = 10 , VCC = 15V To Order CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-45 |
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